| PART |
Description |
Maker |
| 2SB1008 |
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 2A I(C) | TO-126
Low Freq. Power Amp. Epitaxial Planar PNP Silicon Darlington Transistor
|
Rohm CO.,LTD.
ROHM Electronics
|
| 2SC3832 |
Silicon NPN Transistor
Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose)
Silicon NPN Triple Diffused Planar Transistor(High Voltage And High Speed Switching Transistor)(硅NPN三倍扩散平面晶体管（高压和高速开关晶体管
|
Sanken Electric Co.,Ltd.
|
| 2SC4691J |
Small-signal device - Small-signal transistor - High-Speed SwitchVCO and High Freq.
|
Panasonic
|
| 2SC4691 |
Small-signal device - Small-signal transistor - High-Speed SwitchVCO and High Freq.
|
Panasonic
|
| 2SC3757 |
Small-signal device - Small-signal transistor - High-Speed SwitchVCO and High Freq.
|
Panasonic
|
| 2SC5829 |
Small-signal device - Small-signal transistor - High-Speed SwitchVCO and High Freq.
|
Panasonic
|
| 2SA1463-T2 2SA1463-T1 2SA1463 |
Silicon transistor
HIGH SPEED SWITCHING PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
|
NEC
|
| 2SA1462 2SA1462-T1B 2SA1462-L 2SA1462-T2B |
HIGH SPEED SWITCHING PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD
Silicon transistor
|
NEC
|
| 2SA1612-T2 2SA1612-T1 2SA1612 |
Silicon transistor
AUDIO FREQUENCY HIGH GAIN AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR
|
NEC
|
| 2N4347 2N3442 |
High voltage silicon N-P-N transistor. 140V, 100W.
High voltage silicon N-P-N transistor. 160V, 117W.
|
General Electric Solid State
|
| 2SD1592 2SD1592L |
Silicon transistor
NPN SILICON TRIPLE DIFFUSED TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-VOLTAGE LOW-SPEED SWITCHING
TRANSISTOR | BJT | DARLINGTON | NPN | 300V V(BR)CEO | 5A I(C) | SOT-186
|
NEC Corp.
|
| MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 MR |
COMPLEMENTARY SILICON POWER TRANSISTORS
COMPLEMETARY SILICON POWER TRANSISTORS
SILICON NPN TRANSISTOR
HIGH VOLTAGE PNP POWER TRANSISTOR
SILICON NPN POWER DARLINGTON TRANSISTOR
RF Power Field Effect Transistors
880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs
RF LDMOS Wideband Integrated Power Amplifiers
GENERAL PURPOSE L TO X-BAND GaAs MESFET
10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
FREESCALE
NEC
STMICROELECTRONICS[STMicroelectronics]
|
